bar 64 ... w mar-21-2000 1 silicon pin diode high voltage current controlled rf resistor for rf attenuator and switches frequency range above 1 mhz low resistance and short carrier lifetime for frequencies up to 3 ghz 1 3 vso05561 2 bar 64-04w bar 64-05w bar 64-06w eha07181 3 12 a1 c2 c1/a2 eha07179 3 12 a1 a2 c1/c2 eha07187 3 12 c1 c2 a1/a2 type marking pin configuration package bar 64-04w bar 64-05w bar 64-06w pps prs pss 1 = a1 1 = a1 1 = c1 2 = c2 2 = c2 2 = c2 3=c1/a2 3 = c1/2 3 = a1/2 sot-323 sot-323 sot-323 maximum ratings parameter symbol value unit diode reverse voltage v r 150 v forward current i f 100 ma total power dissipation , t s 115 c p tot 250 mw junction temperature t j 150 c operating temperature range t op -55 ... 150 storage temperature t stg -55 ... 150 thermal resistance junction - ambient 1) r thja 300 k/w junction - soldering point r thjs 140 1) package mounted on alumina 15mm x 16.7mm x 0.7mm
bar 64 ... w mar-21-2000 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (br) 150 - - v reverse current v r = 20 v i r - - 50 na forward voltage i f = 50 ma v f - - 1.1 v ac characteristics diode capacitance v r = 20 v, f = 1 mhz c t - 0.23 0.35 pf forward resistance i f = 1 ma, f = 100 mhz i f = 10 ma, f = 100 mhz i f = 100 ma, f = 100 mhz r f - - - 12.5 2.1 0.85 20 2.8 1.35 charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma rr - 1.55 - s series inductance l s - 1.2 - nh
bar 64 ... w mar-21-2000 3 forward current i f = f ( t a *; t s ) * mounted on alumina 0 20 40 60 80 100 120 c 150 t a ,t s 0 20 40 60 80 100 ma 140 i f 5 t s t a permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load i fmax / i fdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p 0 10 1 10 2 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bar 64 ... w mar-21-2000 4 forward resistance r f = f ( i f ) f = 100mhz 10 -2 10 -1 10 0 10 1 10 2 10 3 ma i f -1 10 0 10 1 10 2 10 3 10 ohm r f diode capacitance c t = f ( v r ) f = 1mhz 0 5 10 15 20 v 30 v r 0.0 0.1 0.2 0.3 pf 0.5 c t intermodulation intercept point ip 3 = f ( i f ) f = parameter 10 -1 10 0 10 1 ma i f 1 10 2 10 dbm ip 3 5 f =1800mhz f =900mhz forward current i f = f ( v f ) t a = parameter 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v 1.0 v f -2 10 -1 10 0 10 1 10 2 10 3 10 ma i f
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